Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-02-28
2006-02-28
Wojciechowicz, Edward (Department: 2815)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S578000, C438S684000, C438S620000, C438S706000, C438S197000, C257S347000, C257S295000
Reexamination Certificate
active
07005302
ABSTRACT:
A semiconductor on insulator (SOI) device is comprised of a layer of a dielectric material having a perovskite lattice, such as a rare earth scandate. The dielectric material is selected to have an effective lattice constant that enables growth of semiconductor material having a diamond lattice directly on the dielectric. Examples of the rare earth scandate dielectric include gadolinium scandate (GdScO3), dysprosium scandate (DyScO3), and alloys of gadolinium and dysprosium scandate (Gd1-xDyxScO3).
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Advanced Micro Devices , Inc.
Foley & Lardner LLP
Wojciechowicz Edward
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