Semiconductor-on-insulator (SOI) devices and SOI IC fabrication

Details Semiconductor-on-insulator (SOI) devices and SOI IC fabrication Semiconductor-on-insulator (SOI) devices and SOI IC fabrication

1986-10-24

1988-08-09

Edlow, Martin H.

357 2312, 357 4, 357 22, 357 15, H01L 2978, H01L 2712, H01L 2980, H01L 2948

Patent

active

047631830

ABSTRACT:
A new SOI device which permits both the kink effect to be avoided and threshold voltage to be regulated, as well as a new method for fabricating SOI ICs, is disclosed. The new device included an electrically conductive pathway extending from the active volume and terminating in a non-active region of the substrate of the device. A back-gate bias is communicated to, and kink-inducing charges are conducted away from, the active volume through the conductive pathway. The new fabrication methd permits SOI ICs to be fabricated using available circuit designs and pattern delineating apparatus, e.g., IC mask sets. This method involves the formation of a precursor substrate surface which includes islands of insulating material, each of which is encircled by a crystallization seeding area of substantially single crystal semiconductor material. The boundaries of the islands are defined with a first pattern delineating device, e.g., a mask, which, in terms of the pattern it produces, is substantially identical to a second pattern delineating device. The latter device is a component of pattern delineating apparatus used in forming an IC, e.g., an IC mask set, the component being used to delineate the device regions of the IC. A layer of non-single crystal semiconductor material is formed on the precursor substrate surface, and crystallized with little or no displacement of the islands. The pattern delineating apparatus is then used to form an IC in the crystallized material.

REFERENCES:
patent: 3997908 (1976-12-01), Schloetterer et al.
patent: 4053916 (1977-10-01), Cricchi et al.
patent: 4571609 (1986-02-01), Hatano
McDowell, "Use of the MOS Substrate as a Control Element", IBM Technical Disclosure Bulletin, vol. 10, No. Dec. 1967, p. 1032.
Shinchi et al., "The Buried Oxide MOSFET-A New Type of High-Speed Switching Device", IEEE Transactions on Electron Devices, Oct. 1976, pp. 1190-1191.

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