Semiconductor on insulator MOSFET having strained silicon...

Details Semiconductor on insulator MOSFET having strained silicon... Semiconductor on insulator MOSFET having strained silicon...

2005-09-13

2005-09-13

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S149000, C438S183000

Reexamination Certificate

active

06943087

ABSTRACT:
Strained silicon is grown on a dielectric material in a trench in a silicon germanium layer at a channel region of a MOSFET after fabrication of other MOSFET elements using a removable dummy gate process to form an SOI MOSFET. The MOSFET is fabricated with the dummy gate in place, the dummy gate is removed, and a trench is formed in the channel region. Dielectric material is grown in the trench, and strained silicon is then grown from the silicon germanium trench sidewalls to form a strained silicon layer that extends across the dielectric material. The silicon germanium sidewalls impart strain to the strained silicon, and the presence of the dielectric material allows the strained silicon to be grown as a thin fully depleted layer. A replacement gate is then formed by damascene processing.

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