Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1994-09-27
1996-01-02
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257274, 257276, H01L 2980, H01L 31112
Patent
active
054811260
ABSTRACT:
A semiconductor-on-insulator (SOI) electronic device includes a monocrystalline semiconductor substrate and at least one trench therein. A trench insulating layer is provided on a bottom the trench for electrical isolation and a monocrystalline semiconducting region is also included in the trench, on the trench insulating layer. The semiconducting region preferably includes epitaxially overgrown silicon (EOS) which is grown from an exposed sidewall of the trench. An active region of the electronic device is also included in the semiconductor layer. Second, third, and additional active regions of the electronic device, if any, may also be included in the semiconducting region or in additional semiconducting regions which are provided in additional trenches. The semiconductor substrate may also include one or more active regions of the electronic device.
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Neudeck Gerold W.
Subramanian Chitra K.
Meier Stephen D.
Purdue Research Foundation
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