Semiconductor on insulator and methods of forming same using...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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C438S458000, C257SE21088, C257SE21122, C257SE21568, C257SE27137, C257SE27144, C257SE21161

Reexamination Certificate

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08062956

ABSTRACT:
Methods and apparatus for producing a semiconductor on glass (SOG) structure include: bringing a first surface of a glass substrate into direct or indirect contact with a semiconductor wafer; heating at least one of the glass substrate and the semiconductor wafer such that a second surface of the glass substrate, opposite to the first surface thereof, is at a lower temperature than the first surface; applying a voltage potential across the glass substrate and the semiconductor wafer; and maintaining the contact, heating and voltage to induce an anodic bond between the semiconductor wafer and the glass substrate via electrolysis.

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patent: 2001-010847 (2001-01-01), None
patent: WO 2006/023289 (2006-03-01), None
Incropera et al. (“Introduction to Heat Transfer”, John Wiley and Sons, 4th edition, section 1.3.2, pp. 21-24, 2002).

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