Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2009-08-26
2011-11-22
Garber, Charles (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C257SE21088, C257SE21122, C257SE21568, C257SE27137, C257SE27144, C257SE21161
Reexamination Certificate
active
08062956
ABSTRACT:
Methods and apparatus for producing a semiconductor on glass (SOG) structure include: bringing a first surface of a glass substrate into direct or indirect contact with a semiconductor wafer; heating at least one of the glass substrate and the semiconductor wafer such that a second surface of the glass substrate, opposite to the first surface thereof, is at a lower temperature than the first surface; applying a voltage potential across the glass substrate and the semiconductor wafer; and maintaining the contact, heating and voltage to induce an anodic bond between the semiconductor wafer and the glass substrate via electrolysis.
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Abdelaziez Yasser A
Corning Incorporated
Garber Charles
Mason Matthew J.
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