Semiconductor on glass insulator with deposited barrier layer

Details Semiconductor on glass insulator with deposited barrier layer Semiconductor on glass insulator with deposited barrier layer

2007-09-11

2007-09-11

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

C438S455000, C438S513000, C438S680000, C257SE21170, C257SE21320

Reexamination Certificate

active

11213130

ABSTRACT:
Methods and apparatus provide for: a silicon on insulator structure, comprising: a glass substrate; a layer of semiconductor material; and a deposited barrier layer of between about 60 nm to about 600 nm disposed between the glass substrate and the semiconductor material, where the glass substrate and semiconductor material are bonded together via electrolysis.

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