Semiconductor-on-diamond devices and methods of forming

Details Semiconductor-on-diamond devices and methods of forming Semiconductor-on-diamond devices and methods of forming

2006-11-07

2006-11-07

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Having diamond semiconductor component

C438S479000, C438S455000, C438S459000, C427S249800, C427S249130, C427S133000

Reexamination Certificate

active

07132309

ABSTRACT:
The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely match a configuration intended for the device surface of a diamond layer. An adynamic diamond layer is then deposited upon the diamond interface surface of the mold, and a substrate is joined to the growth surface of the adynamic diamond layer. At least a portion of the mold can then be removed to expose the device surface of the diamond which has received a shape which inversely corresponds to the configuration of the mold's diamond interface surface. The mold can be formed of a suitable semiconductor material which is thinned to produce a final device. Optionally, a semiconductor material can be coupled to the diamond layer subsequent to removal of the mold.

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