Semiconductor-on-diamond devices and associated methods

Details Semiconductor-on-diamond devices and associated methods Semiconductor-on-diamond devices and associated methods

2007-09-06

2010-12-07

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Having diamond semiconductor component

C438S977000, C257S077000, C257SE21041

Reexamination Certificate

active

07846767

ABSTRACT:
Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD device is provided that includes etching depressions into an etch surface of a semiconductor substrate to a uniform depth, depositing a diamond layer onto the etch surface to form diamond-filled depressions, and thinning the semiconductor substrate at a thinning surface opposite the etch surface until the diamond filled depressions are exposed, thus forming a semiconductor device having a thickness substantially equal to the uniform depth.

REFERENCES:
patent: 4952832 (1990-08-01), Imai et al.
patent: 4981818 (1991-01-01), Anthony et al.
patent: 4988421 (1991-01-01), Drawl et al.
patent: 5130103 (1992-07-01), Yamagata et al.
patent: 5130111 (1992-07-01), Pryor
patent: 5131963 (1992-07-01), Ravi
patent: 5173089 (1992-12-01), Tanabe et al.
patent: 5186785 (1993-02-01), Annamalai
patent: 5221870 (1993-06-01), Nakahata et al.
patent: 5246884 (1993-09-01), Jaso et al.
patent: 5329208 (1994-07-01), Imai et al.
patent: 5355568 (1994-10-01), Imai et al.
patent: 5366579 (1994-11-01), Yamazaki et al.
patent: 5374293 (1994-12-01), Takashita et al.
patent: 5380349 (1995-01-01), Taniguchi et al.
patent: 5390401 (1995-02-01), Shikata et al.
patent: 5391895 (1995-02-01), Dreifus
patent: 5401544 (1995-03-01), Nakahata et al.
patent: 5402029 (1995-03-01), Nakamura et al.
patent: 5440189 (1995-08-01), Nakahata et al.
patent: 5446329 (1995-08-01), Nakahata et al.
patent: 5562769 (1996-10-01), Dreifus et al.
patent: 5576589 (1996-11-01), Dreifus et al.
patent: 5633088 (1997-05-01), Pinneo
patent: 5643641 (1997-07-01), Turchan et al.
patent: 5652436 (1997-07-01), Stoner et al.
patent: 5656828 (1997-08-01), Zachai et al.
patent: 5660881 (1997-08-01), Okamura
patent: 5776246 (1998-07-01), Tanabe et al.
patent: 5776355 (1998-07-01), Martin
patent: 5827613 (1998-10-01), Nakayama et al.
patent: 5843224 (1998-12-01), Zachai et al.
patent: 5846320 (1998-12-01), Matsuyama et al.
patent: 5920143 (1999-07-01), Tarui et al.
patent: 5925154 (1999-07-01), Semenov et al.
patent: 6022622 (2000-02-01), Domoto et al.
patent: 6039641 (2000-03-01), Sung
patent: 6051063 (2000-04-01), Tanabe et al.
patent: 6054719 (2000-04-01), Fusser et al.
patent: 6057602 (2000-05-01), Hudson et al.
patent: 6121066 (2000-09-01), Ju et al.
patent: 6159604 (2000-12-01), Adachi
patent: 6210780 (2001-04-01), Fujii et al.
patent: 6222299 (2001-04-01), Graebner et al.
patent: 6248394 (2001-06-01), Du et al.
patent: 6275123 (2001-08-01), Tanaka et al.
patent: 6278342 (2001-08-01), Ella
patent: 6356006 (2002-03-01), Fujii et al.
patent: 6448688 (2002-09-01), Fujii et al.
patent: 6466105 (2002-10-01), Lobl et al.
patent: 6531226 (2003-03-01), Petkie
patent: 6592436 (2003-07-01), Abe et al.
patent: 6659161 (2003-12-01), Sung
patent: 6710513 (2004-03-01), Nakahata et al.
patent: 6814130 (2004-11-01), Sung
patent: 6830813 (2004-12-01), Ravi
patent: 6936497 (2005-08-01), Ravi et al.
patent: 7011134 (2006-03-01), Sung
patent: 7084432 (2006-08-01), Kachi et al.
patent: 7132309 (2006-11-01), Sung
patent: 2003/0160542 (2003-08-01), Bi et al.
patent: 2006/0174823 (2006-08-01), Sung
patent: 2006/0186556 (2006-08-01), Sung
patent: 2006/0249748 (2006-11-01), Piner et al.
patent: 2008/0087891 (2008-04-01), Sung
patent: 0 696 819 (1996-02-01), None
patent: 0930702 (1999-07-01), None
patent: 2 292 253 (1996-02-01), None
patent: 06276049 (1994-09-01), None
patent: WO 93/01617 (1993-01-01), None
patent: WO 94/08077 (1994-04-01), None
Choi K.H. et al., “Effect of Dielectric Layer in ZnO/Dielectric/Si Layered Structure on GSAW and HVPSAW Propagation Properties”, 2000 IEEE Ultrasonics Symposium, Reference No. 0-7803-6868-6/00, pp. 1-4.

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