1975-01-08
1977-05-17
Wojciechowicz, Edward J.
357 16, 357 60, 357 61, 357 63, 357 65, 357 90, H01L 29161, H01L 2904, H01L 29167, H01L 2348
Patent
active
040245691
ABSTRACT:
A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.
REFERENCES:
patent: 3632436 (1972-01-01), Denning
patent: 3684930 (1972-08-01), Collins et al.
Jour. of App. Physics -- vol. 39, No. 9, Aug. 1968 -- YEH et al. "Diffusion of tin into silicon"
Hawrylo Frank Zygmunt
Kressel Henry
Bruestle Glenn H.
Calder Daniel N.
Haas George E.
RCA Corporation
Wojciechowicz Edward J.
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