Semiconductor nonvolatile storage device

Details Semiconductor nonvolatile storage device Semiconductor nonvolatile storage device

2007-07-24

2007-07-24

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185290

Reexamination Certificate

active

11242894

ABSTRACT:
A writing operation selecting circuit is provided for selecting a temporary writing operation having a prescribed writing time for a memory cell transistor element and an additional writing operation for the memory cell transistor element. A writing time control circuit is provided for controlling an additional writing operation time by an output signal of the writing operation selecting circuit.

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patent: WO 01/84552 (2001-11-01), None

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