Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-07-11
1997-02-18
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 25, 257 68, 257321, 257324, 257410, 257411, H01L 2906
Patent
active
056043570
ABSTRACT:
A semiconductor device comprising a substrate having thereon a capacitance part and an electrode, the capacitance part having two storage regions for conductive carriers, the storage regions having therebetween a first barrier region of a multi-tunneling structure, a second barrier region being provided among the storage region, semiconductor substrate and electrode, the first barrier region comprising two tunneling barriers and a low barrier region interposed therebetween, so that when the conductive carriers are moved between the storage regions to store memory by use of polarization characteristic, high voltage makes higher probability of conductive carrier shift and low voltage lower probability of the carrier shift in synergistic manner, whereby the semiconductor device having merits of writing, erasing and reading characteristic in DRAMs and flash EEPROMs memories.
REFERENCES:
patent: 5319229 (1994-06-01), Shimoji et al.
Matsushita Electric - Industrial Co., Ltd.
Tran Minhloan
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