Semiconductor nonvolatile memory device having reduced switching

Details Semiconductor nonvolatile memory device having reduced switching Semiconductor nonvolatile memory device having reduced switching

1994-06-01

1995-11-14

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

365218, G11C 1606

Patent

active

054673097

ABSTRACT:
A semiconductor nonvolatile memory device capable of reducing the overhead time of the time required for switching the verify operation and the verify operation itself. In the semiconductor nonvolatile memory device which operates to program the threshold of the memory cells on the basis of a plurality of repetitive operations, the mincing width .increment.Vth of the variation of the threshold of the memory cells relative to one operation for changing the threshold (applying the program pulse) is expressed by .increment.Vth=Kvth.multidot.log (t2/t1), and the ratio (t2/t1) between the program pulse widths is expressed by (t2/t1)=10E(.increment.Vth/Kvth). The pulses in which the difference .increment.Vth of the variation of the threshold of the memory cells is made constant, and the pulse width is increased as the repetition number increases are applied to the memory cells, thereby reducing the application number of program pulses.

REFERENCES:
patent: 4996571 (1991-02-01), Kume et al.
patent: 5034922 (1991-06-01), Burgess
patent: 5347490 (1994-09-01), Terada et al.

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