Semiconductor nonvolatile memory device and method of writing th

Details Semiconductor nonvolatile memory device and method of writing th Semiconductor nonvolatile memory device and method of writing th

1999-01-21

2000-03-07

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular connection

365 63, 365 94, G11C 1600

Patent

active

060348909

ABSTRACT:
A first device region is formed in a first well region provided on a semiconductor substrate and a second device region is formed in a second well region, both of which are separated by a field oxidation film, a memory transistor for writing a program is provided in the first device region, an address transistor controlling the writing is provided in the second device region, and a source region of the address transistor and a drain region of the memory transistor are connected by an interconnecting metal to structure a semiconductor nonvolatile memory device which can electrically perform writing only once.

REFERENCES:
patent: 4045784 (1977-08-01), Mayumi et al.
patent: 5438542 (1995-08-01), Atsumi et al.
patent: 5644154 (1997-07-01), Spinella et al.
patent: 5943264 (1999-08-01), Fournel et al.

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