Static information storage and retrieval – Floating gate – Multiple values
Patent
1998-12-23
2000-05-02
Hoang, Huan
Static information storage and retrieval
Floating gate
Multiple values
36518518, 36518512, 36518525, 36518522, G11C 1604
Patent
active
060580429
ABSTRACT:
A nonvolatile semiconductor memory device having a memory cell in which an amount of charge stored in a charge storage unit changes according to a voltage supplied to a word line and a bit line, a threshold voltage changes according to that change, and data of a value according to the threshold voltage is stored, and writing trinary or more multi-bit data into memory cells in units of pages, provided with a precharging means for precharging all bit lines to a predetermined voltage before the write operation and a write control circuit having a latch circuit by which the write data is latched, making the bit line selected in accordance with an address discharge in accordance with the latch data, and performing write operations in parallel.
REFERENCES:
patent: 5835414 (1998-11-01), Hung et al.
patent: 5870335 (1999-02-01), Khan et al.
1995 IEEE International Solid-State Circuits Conference; Digest of Technical Papers; A Multilevel-Cell 32Mb Flash Memory; M. Bauer et al. (pp. 132, 133 and 135).
1996 IEEE International Solid-State Circuits Conference; Digest of Technical Papers; A 3.3V 128Mb Multi-level NAND Flash Memory for Mass Storage Applications; Tae-Sung Jung et al. (pp. 32 and 33).
Hoang Huan
Kananen Ronald P.
Sony Corporation
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