Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-03-27
2008-10-28
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185050, C365S185220, C365S185280, C365S185290
Reexamination Certificate
active
07443731
ABSTRACT:
An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
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Hisamoto Digh
Ishimaru Tetsuya
Kimura Shin'ichiro
Okada Daisuke
Yasui Kan
Miles & Stockbridge P.C.
Pham Ly D
Renesas Technology Corp.
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