Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2006-10-24
2006-10-24
Tran, Michael (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185280
Reexamination Certificate
active
07126850
ABSTRACT:
In a nonvolatile memory device, wherein, for example, data “1” is electrically charged, while data “0” is not electrically charged, and memory cells susceptible to charge loss are included, when data in the array10is count value of “1”>count value of “0”, write data is converted to thereby make “1” to “0” and “0” to “1”, leading to number of “1”<number of “0”, so that a statistical reliability of the data in the array10is improved. The data, which is converted and written, is converted in its polarity prior to the conversion when it is read.
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“Technology for Improving Reliability In Flash Memory” Chapter 5, Section 4, pp. 223-232 (Japanese), pp. 1-18 (English translation), 1988.
Fujiwara Atsushi
Tatsukawa Naohisa
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Tran Michael
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