Semiconductor nonvolatile memory device

Details Semiconductor nonvolatile memory device Semiconductor nonvolatile memory device

1997-01-06

1998-07-21

Zarabian, A.

Static information storage and retrieval

Floating gate

Particular biasing

36518528, 36518529, G11C 1134

Patent

active

057843252

ABSTRACT:
A semiconductor nonvolatile memory device comprised of bit lines and source lines arranged in a hierarchy of main lines and sub-lines, the main lines and the sub-lines being selectively connected in accordance with the operation of the memory device and memory cells being connected in parallel between the sub-source lines and the sub-bit lines, wherein data is written by introducing electrons from the full channel surface to the charge-storage layer by FN tunneling and is erased by drawing out the electrons in the charge-storing layer from the drain side by FN tunneling. Operation is made possible by a single power source and the area of the cell of the full one transistor memory type is made smaller.

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