Semiconductor nonvolatile memory

Details Semiconductor nonvolatile memory Semiconductor nonvolatile memory

1990-05-30

1991-10-01

Jackson, Jr., Jerome

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 55, 357 54, 365185, H01L 2701

Patent

active

050538420

ABSTRACT:
The invention is directed to a semiconductor nonvolatile memory of the floating gate type having dual gate structure comprised of a first channel region having a channel resistance controlled by a control gate electrode and a second channel region having a channel resistance controlled by a floating gate electrode. The first channel region is formed on one face section of semiconductor substrate which has a crystal face orientation different from that of another face section on which the second channel region is formed. By such construction, channel length of the first and second channel regions can be shortened to increase memory capacity density and to improve quality.

REFERENCES:
patent: 4542396 (1985-09-01), Schutter et al.
patent: 4774556 (1988-09-01), Fujii et al.
patent: 4796228 (1989-01-01), Baglee
patent: 4929988 (1990-05-01), Yoshikawa

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