Semiconductor non-volatile storage device capable of a high spee

Details Semiconductor non-volatile storage device capable of a high spee Semiconductor non-volatile storage device capable of a high spee

1998-12-23

2000-09-19

Le, Vu A.

Static information storage and retrieval

Floating gate

Particular connection

36518511, 3651852, 365 63, G11C 1604

Patent

active

061221961

ABSTRACT:
The present invention proposes a non-volatile semiconductor storage, comprising a plurality of main bit lines, a plurality of sub bit lines connected to the main bit lines, and a plurality of memory cell arrays, each including a plurality of non-volatile semiconductor memory cells disposed like an array. Each of those memory cells has a source terminal, a drain terminal, and a control gate, and each source-drain path is connected to a sub bit line. Between a main bit line and a sub bit line connected to the main bit line is disposed the source-drain path of a first transistor, and the source-drain path of a second transistor is connected to the sub bit line.

REFERENCES:
patent: 5557124 (1996-09-01), Roy et al.
patent: 5615153 (1997-03-01), Yiu et al.
patent: 5822248 (1998-10-01), Satori et al.

Affiliated with

Also associated with

Rating

Semiconductor non-volatile storage device capable of a high spee does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor non-volatile storage device capable of a high spee, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor non-volatile storage device capable of a high spee will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1079937