Semiconductor non-volatile storage device

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

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Details

C365S185130, C365S185110, C365S185170, C365S185230, C365S185210

Reexamination Certificate

active

06944056

ABSTRACT:
A semiconductor non-volatile storage device of the present invention which lets a memory cell directly drive up to a local bit line, wherein the output of the local bit line is received by a gate electrode of a separately-provided signal amplifying transistor, and the signal amplifying transistor is used to drive a global bit line having a large load capacity. Since an amplifying transistor having a drive power higher than a memory cell drives the parasitic capacity of a global bit line, information stored in a memory cell can be read out at high speed. Therefore, the storage device is used for storing program codes for controlling microcomputers or the like to thereby enhance a system performance.

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