Semiconductor non-volatile programmable memory device preventing

Details Semiconductor non-volatile programmable memory device preventing Semiconductor non-volatile programmable memory device preventing

1998-09-10

1999-04-20

Nelms, David

Static information storage and retrieval

Floating gate

Disturbance control

36518514, 36518515, 36518528, G11C 1604

Patent

active

058963162

ABSTRACT:
An electrically erasable and programmable read only memory device unavoidably creates weak electric field between control electrodes and drain nodes of non-selected floating gate type field effect transistors connected to either selected word or bit line in an erasing/programming operation; however, the direction of the electric field is changed during the erasing/programming operation so as to prevent the non-selected floating gate type field effect transistors from disturbing phenomenon.

REFERENCES:
patent: 5280446 (1994-01-01), Ma et al.

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