Semiconductor non-volatile memory element of an electrically era

Details Semiconductor non-volatile memory element of an electrically era Semiconductor non-volatile memory element of an electrically era

1982-03-19

1985-03-05

Richardson, Robert L.

Static information storage and retrieval

Read only systems

Semiconductive

365185, G11C 1140

Patent

active

045035199

ABSTRACT:
A semiconductor non-volatile memory element of an electrically erasable type includes a floating gate formed on a semiconductor substrate through a first insulating film, and an erase-only or a write/erase gate formed through a second insulating film on the floating gate. The second insulating film is an oxidized film formed by thermal oxidation of polycrystalline silicon having a thickness in the range between 150 and 400 angstroms. Due to such a thin insulating film, the amount of electrons trapped in the second insulating film is greatly decreased so that erasure is possible a greater number of times.

REFERENCES:
patent: 4288863 (1981-09-01), Adam
patent: 4342099 (1982-07-01), Kuo
patent: 4366555 (1982-12-01), Hu
patent: 4412310 (1983-10-01), Korsh et al.
IBM Technical Disclosure Bulletin, "Floating Gate Field-Effect Transistor Memory", by Chiu et al., vol. 16, No. 2, Jul. 1973, pp. 619-620.
Applied Physics Letters, "A New Approach for the Floating-Gate MOS Non-volatile Memory", by Han-Sheng Lee, vol. 31, No. 7, Oct. 1, 1977, pp. 475-476.
Journal of Electrochemical Society, "Silicon Oxidation Studies: Morphological Aspects of the Oxidation of Polycrystalline Silicon", by Irene et al., vol. 127, No. 3, Mar. 1980, pp. 705-713.
IEEE, "Electron Trapping in Oxide Grown from Polycrystalline Silicon", by Joh et al., pp. 229-932.
Electronics, "Electrically Erasable Memory Behaves Like a Fast, Nonvolatile RAM", by Chris Wallace, May 10, 1979, pp. 128-131.

Affiliated with

Also associated with

Rating

Semiconductor non-volatile memory element of an electrically era does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor non-volatile memory element of an electrically era, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor non-volatile memory element of an electrically era will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1738152