Semiconductor non-volatile memory, data-writing method,...

Details Semiconductor non-volatile memory, data-writing method,... Semiconductor non-volatile memory, data-writing method,...

2007-06-01

2009-12-08

Phung, Anh (Department: 2824)

Static information storage and retrieval

Powering

C365S185030, C365S189160

Reexamination Certificate

active

07630269

ABSTRACT:
A semiconductor non-volatile memory, a data-writing method, a semiconductor non-volatile memory fabrication method and a medium storing a data-writing program that are capable of suppressing a change, due to an operation of memorization of data to a charge accumulation portion, in data which has been memorized at another charge accumulation portion in the same memory cell. Data units which are objects of memorization are memorized to first and second charge accumulation portions of a memory cell by power being supplied in accordance with the data units and charges being accumulated at the first and second charge accumulation portions, in descending order of sizes of charge amounts that are to be accumulated.

REFERENCES:
patent: 5959882 (1999-09-01), Yoshida et al.
patent: 7211878 (2007-05-01), Ono
patent: 2005/0002236 (2005-01-01), Morikawa et al.
patent: 2005/0002263 (2005-01-01), Iwase et al.
patent: 10-027486 (1998-01-01), None
patent: 2005-064295 (2005-10-01), None

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