Semiconductor non-volatile memory

Details Semiconductor non-volatile memory Semiconductor non-volatile memory

1978-05-30

1980-11-11

Edlow, Martin H.

357 13, 357 4, H01L 2978

Patent

active

042336163

ABSTRACT:
In the disclosed FAMOS semiconductor non-volatile memory a source and a drain region of the p.sup.+ type are disposed in an n semiconductor layer to form a gate region between them. The main face of the semiconductor layer is coated with a silicon dioxide film in which a polycrystalline silicon gate is buried to bridge the source and drain regions. An n.sup.+ type high doped semiconductor region is disposed in the semiconductor layer only under the silicon gate to form a pn junction with the drain region. Thus the pn junction is normal to the main face of the semiconductor layer.

REFERENCES:
patent: 4014036 (1977-03-01), Ho
patent: 4054895 (1977-10-01), Ham
patent: 4057820 (1977-11-01), Gallagher
patent: 4135929 (1979-01-01), Breus
patent: 4142926 (1979-03-01), Morgan

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