Semiconductor nitride film etching system

Details Semiconductor nitride film etching system Semiconductor nitride film etching system

1996-09-25

1999-12-14

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

B05D 100, B05C 300

Patent

active

060012153

ABSTRACT:
Semiconductor nitride film etching systems are provided using a hot phosphoric-acid-based treatment solution, wherein the systems contain means for measuring phosphoric acid concentration, silicon concentration, fluorine concentration, or specific gravity or a combination thereof, and additives of the treatment solution are controlled or the treatment solution is exchanged. The concentration of components of the treatment solution, particularly the concentration of silicon, is controlled, thus providing stabilization of the etching rate of a silicon nitride film, and stable control of the etching selection ratio.

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