Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2005-12-21
2009-12-08
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S020000, C257S024000, C257S027000, C257SE29255, C257SE51040, C977S762000, C977S938000
Reexamination Certificate
active
07629629
ABSTRACT:
A nanowire (100) according to the present invention includes a plurality of contact regions (10a,10b) and at least one channel region (12), which is connected to the contact regions (10a,10b). The channel region (12) is made of a first semiconductor material and the surface of the channel region (12) is covered with an insulating layer that has been formed selectively on the channel region (12). The contact regions (10a,10b) are made of a second semiconductor material, which is different from the first semiconductor material for the channel region (12), and at least the surface of the contact regions (10a,10b) includes a conductive portion.
REFERENCES:
patent: 7067867 (2006-06-01), Duan et al.
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2002/0163079 (2002-11-01), Awano
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2004/0005723 (2004-01-01), Empedocles et al.
patent: 2005/0142766 (2005-06-01), Hareland et al.
patent: 2005/0212079 (2005-09-01), Stumbo et al.
patent: 2006/0008942 (2006-01-01), Romano et al.
patent: 2004-507104 (2004-03-01), None
patent: 2005-510711 (2005-04-01), None
patent: WO 02/080280 (2002-10-01), None
patent: WO 03/046536 (2003-06-01), None
patent: WO 2004/032191 (2004-04-01), None
patent: WO 2004/032193 (2004-04-01), None
Duan, X., et al. “High-Performance Thin-Film Transistors Using Semiconductor Nanowires and Nanoribbons,” Nature, vol. 425, Sep. 18, 2003, pp. 274-278.
Chen, X., et al. “Electron Mobility Enhancement in Strained SiGe Verticaln-type Metal-oxide-semiconductor Field-effect Transistors,” American Institute of Physics, vol. 78, No. 3, Jan. 15, 2001, pp. 377-379.
Kawashima Takahiro
Saitoh Tohru
Huynh Andy
McDermott Will & Emery LLP
Panasonic Corporation
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