Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-04-03
2007-04-03
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S192000, C257S280000, C257S284000, C257SE29246, C257SE29247, C257SE29249
Reexamination Certificate
active
11151693
ABSTRACT:
A semiconductor device includes an underlying layer made of a group-III nitride containing at least Al and formed on a substrate, and a group of stacked semiconductor layers including a first semiconductor layer made of a group-III nitride, preferably GaN, a second semiconductor layer made of AlN and a third semiconductor layer made of a group-III nitride containing at least Al, preferably AlxGa1-xN where x≧0.2. The semiconductor device suppresses the reduction in electron mobility resulting from lattice defects and crystal lattice randomness. This achieves a HEMT device having a sheet carrier density of not less than 1×1013/cm2and an electron mobility of not less than 20000 cm2/V·s at a temperature of 15 K.
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Smorchkova, et al., “A1N/GaN and (A1,Ga)N/A1N/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy,” Journal of Applied Physics, (Nov. 15, 2001) vol. 90, No. 10, pp. 5196-5201.
Shen, et al., “A1GaN/A1N/GaN High-Power Microwave HEMT,” IEEE Electron Device Letters, (Oct. 2001) vol. 22, No. 10, pp. 457-459.
Burr & Brown
NGK Insulators Ltd.
Rodela Eduardo A.
Tran Minhloan
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