Semiconductor multilayer reflector and light emitting device wit

Details Semiconductor multilayer reflector and light emitting device wit Semiconductor multilayer reflector and light emitting device wit

1991-11-13

1993-08-17

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 98, 359584, 372 96, 372 99, H01S 319

Patent

active

052375811

ABSTRACT:
A semiconductor multilayer reflector (Distributed Bragg Reflector) includes a plurality of first quarter-wavelength layers each having a high refractive index, a plurality of second quarter-wavelength layers each having a low refractive index, and high concentration impurity doping regions. The first and second layers are piled up alternately, and each of the doping regions is formed at a heterointerface between the first and second layer. In this structure, the width and the height of the potential barrier at the heterointerface becomes small, so that tunnel current flowing through the multilayer reflector is increased.

REFERENCES:
patent: 5012486 (1991-04-01), Luryi et al.

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