Semiconductor-mounting heat-radiative substrates, a method of ma

Details Semiconductor-mounting heat-radiative substrates, a method of ma Semiconductor-mounting heat-radiative substrates, a method of ma

1994-01-13

1995-09-19

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

257720, H01L 2358, H01L 2966, G01T 124

Patent

active

054518172

ABSTRACT:
A method for manufacturing heat-radiative substrates on which semiconductor devices such as ICs and transistors are mounted and packages using the substrates, wherein a plurality of CuW or CuMo composite materials obtained by the infiltration method or the mixed powder sintering method are joined together with Cu interposed therebetween. Accordingly, the remaining empty holes within the CuW or CuMo materials are filled sufficiently with Cu, allowing high-quality packages having a successful thermal characteristic to be obtained.

REFERENCES:
patent: 4792878 (1988-12-01), Buselmeier et al.
patent: 4879588 (1989-11-01), Ohtsuka et al.
patent: 5045922 (1991-09-01), Kodama et al.
patent: 5055914 (1991-10-01), Shimizu et al.
patent: 5150280 (1992-09-01), Arai et al.

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