Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-04-19
2011-04-19
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S069000, C257S270000, C257S350000, C257SE21412, C257SE29147
Reexamination Certificate
active
07928445
ABSTRACT:
A disclosed semiconductor device includes a MOS transistor that causes no problems concerning the formation of a thick gate insulating film and that is applicable to high withstand voltage devices. A drain region has a double diffusion structure including an N-drain region3dand an N+ drain region11d. A gate electrode includes a first gate electrode9formed on an insulating film7and a second gate electrode13formed on the first gate electrode9via a gate electrode insulating film11. Between the gate insulating film7and the N+ source region11s, a field insulating film15is disposed, over which an edge of the first gate electrode9is disposed. A gate voltage applied to the second gate electrode13via a gate wiring13gis divided between the gate insulating film7and the gate electrode insulating film11.
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Chiu Tsz K
Cooper & Dunham LLP
Ricoh & Company, Ltd.
Smith Zandra
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