Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Patent
1997-05-19
1998-06-16
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
257703, 257725, H01L 2334
Patent
active
057675767
ABSTRACT:
A semiconductor module includes a ceramic substrate for mounting plural semiconductor chips. Even if cracks and cleavages are formed in the ceramic substrate, further damages, such as lowering dielectric or insulation strength is prevented. The semiconductor module includes IGBTs arranged on one ceramic substrate soldered to a metal base plate, and the upper surface of the ceramic substrate is divided into zones. On each zone, a copper foil with one IGBT is mounted. A snap line is formed between the zones to localize the cracks and cleavages formed by bending stress to the snap line. The copper foils on the zones are connected to each other by a conductor bridge disposed over the snap line.
REFERENCES:
patent: 5291065 (1994-03-01), Arai et al.
Kobayashi Takatoshi
Yamada Toshifusa
Fuji Electric & Co., Ltd.
Potter Roy
Thomas Tom
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