Semiconductor module, method of manufacturing semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

Reexamination Certificate

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Details

C257S750000, C257S774000, C257S781000, C257S785000, C257SE23020, C257SE23068, C257SE23070

Reexamination Certificate

active

07855452

ABSTRACT:
An electrode for a semiconductor device is formed on the mounting surface (particularly, the outer periphery thereof) of a semiconductor substrate in a semiconductor module. In order to secure a large gap between the electrodes, an insulating layer is formed on the electrode. Also formed are a plurality of bumps penetrating the insulating layer and connected to the electrode, and a rewiring pattern integrally formed with the bumps. The rewiring pattern includes a bump area and a wiring area extending contiguously with the bump area.The insulating layer is formed to have a concave upper surface in an interval between the bumps, and the wiring area of the rewiring pattern is formed to fit that upper surface. The wiring area of the rewiring pattern is formed to be depressed toward the semiconductor substrate in relation to the bump area of the rewiring pattern.

REFERENCES:
patent: 2002/0132461 (2002-09-01), Kizaki
patent: 2003/0102551 (2003-06-01), Kikuchi
patent: 2004/0140561 (2004-07-01), Suzuki
patent: 09-289264 (1997-11-01), None

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