Semiconductor module having high insulating power and high therm

Details Semiconductor module having high insulating power and high therm Semiconductor module having high insulating power and high therm

1993-01-25

1998-07-28

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257707, 257712, 257713, H01L 2336

Patent

active

057866333

ABSTRACT:
A semiconductor module having a high dissipated power has an electrically insulating and thermally conducting layer of crystalline carbon provided between a semiconductor chip and a heat elimination element, whereby the semiconductor chip, the insulating layer and the heat elimination element are connected via an intermediate layer and via connecting layers of silver by pressure sintering. For low-voltage applications, a layer of amorphous carbon can alternatively be employed instead of the layer of crystalline carbon. Extremely low heat transmission resistance between the semiconductor chip and the heat elimination element is provided.

REFERENCES:
patent: 3872496 (1975-03-01), Potter
patent: 5031029 (1991-07-01), Acocella et al.
"Main aspects in designing DCB substrates for automotive applications," Vebindrungstechnik in der Electronik, 5. Int. Vollopuim, Feb. 22, 1990, pp. 25-29.

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