Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2011-04-12
2011-04-12
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S706000, C257SE23080
Reexamination Certificate
active
07923833
ABSTRACT:
A semiconductor module10includes a ceramic substrate having a front surface on which a semiconductor element12is mounted and a rear surface on the opposite side of the front surface, a front metal plate15joined to the front surface, a rear metal plate16joined to the rear surface, and a heat sink13joined to the rear metal plate16. The rear metal plate16includes a joint surface16bthat faces the heat sink13. The joint surface16bincludes a joint area and a non-joint area. The non-joint area includes recesses18which extend in the thickness direction of the rear metal plate16. The joint area of the rear metal plate16is in a range from 65% to 85% of the total area of the joint surface16bon the rear metal plate16. As a result, excellent heat dissipating performance can be achieved while occurrence of distortion and cracking due to thermal stress is prevented.
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Furukawa Yuichi
Kono Eiji
Nakagawa Shintaro
Otoshi Kota
Tanaka Katsufumi
Kabushiki Kaisha Toyota Jidoshokki
Locke Lord Bissell & Liddell LLP
Monbleau Davienne
Showa Denko K.K.
Trinh Hoa B
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