Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2005-03-15
2005-03-15
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S723000, C257S773000, C257S901000
Reexamination Certificate
active
06867494
ABSTRACT:
A semiconductor module includes a supporting substrate having a connecting section on a first major surface thereof. A first semiconductor chip includes a first MIS transistor a source of which is formed on the bottom thereof. A second semiconductor chip includes a second MIS transistor a drain of which is formed on the bottom thereof. The first and second semiconductor chips are on the supporting substrate such that the source of the first MIS transistor and the drain of the second MIS transistor are connected to the connecting section and connected each other through the connecting section. An IC chip is provided on the first major surface and connected to gates of the first and second MIS transistors. An insulative envelope covers the supporting substrate, first and second semiconductor chips and IC chip. Partly exposed connecting terminals are electrically connected to the connecting section and first and second semiconductor chips.
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Kameda Mitsuhiro
Sameshima Koichi
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pham Long
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