Semiconductor mixed crystal quantum well device manufacture

Details Semiconductor mixed crystal quantum well device manufacture Semiconductor mixed crystal quantum well device manufacture

1993-01-14

1993-10-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG160, H01L 2120

Patent

active

052544966

ABSTRACT:
A strain-compensated III-V quantum well device is grown by vapor phase epitaxy using the same relative atomic proportions of indium and gallium in both the quantum well layers (20) and the barrier layers (21). The top and bottom barrier layers of the quantum well stack are half the thickness of the other barrier layers of the stack.

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