Semiconductor MIS field effect transistor with semi-amorphous se

Details Semiconductor MIS field effect transistor with semi-amorphous se Semiconductor MIS field effect transistor with semi-amorphous se

1992-08-14

1997-01-07

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 58, 257 66, H01L 29786

Patent

active

055919871

ABSTRACT:
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region formed primarily of semi-amorphous semiconductor. The second semi-conductor region has a higher degree of conductivity than the first semiconductor region so that a semi-conductor element may be formed.

REFERENCES:
patent: 3191061 (1965-06-01), Weimer
patent: 4160260 (1979-07-01), Weitzel et al.
patent: 4239554 (1980-12-01), Yamazaki
patent: 4254429 (1981-03-01), Yamazaki
patent: 4400409 (1983-08-01), Izu et al.
patent: 4605941 (1986-08-01), Ovshinsky et al.
Matsuda et al., "Electrical and Structural Properties of Phosphorus -Doped Glow-discharge Si:F:H and Si:H Films", Japanese Journal of Applied Physics, vol. 19, No. 6, Jun. 1980, pp. L305-L308.

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