Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1998-04-29
1999-11-16
Lee, Benny
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330 66, H03F 360
Patent
active
059865067
ABSTRACT:
A semiconductor microwave amplifier includes input- and output-side microstrip lines formed on a printed-circuit board to oppose each other, input and output electrodes formed on the microstrip lines to be parallel to the microstrip lines, a pair of ground electrodes formed in a direction perpendicular to the input and output electrodes to oppose each other, and a semiconductor amplification device connected to all of the electrodes. This amplifier further has a metal plate connected to the ground electrodes to ensure high-frequency isolation between the input electrode and the output electrode and shield electromagnetic connection, and a through hole for connecting a ground portion of the semiconductor device to a ground surface for the microstrip lines, the ground surface being formed on the printed-circuit board.
REFERENCES:
patent: 3869678 (1975-03-01), Mahoney
patent: 4887049 (1989-12-01), Krowne
Choe Henry
Lee Benny
NEC Corporation
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