Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-12-26
2000-10-31
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257761, 257762, 257763, 257707, 257748, 257770, 257779, 257781, 257783, 257782, 257676, 257677, H01L 2348
Patent
active
061407038
ABSTRACT:
A high temperature metallization system for use with a semiconductor device (23). The semiconductor device (23) has a multi-layer metallization system (36). An adhesion layer (37) of the metallization system (36) is formed on a semiconductor substrate (20). A barrier layer (38) that contains a nickel alloy is formed on the adhesion layer (37). A protective layer (39) is formed on the barrier layer (38). The barrier layer (38) inhibits solder components from diffusing toward the semiconductor substrate (20) during high temperature processing.
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Pfeifer et al., "Ni-7% V/AG Backmetal Project", Aug. 1992, Motorola Technical Developments, vol. 16, p. 144.
Cronin Wayne A.
Koetz Kirby F.
Parsey, Jr. John M.
Scrivner Brian L.
Huffman A. Kate
Motorola Inc.
Parker Lanny L.
Saadat Mahshid
Warren Matthew E.
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