Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-06-18
1995-11-28
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 15, 257 94, H01L 2714, H01L 3100
Patent
active
054710677
ABSTRACT:
A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer, an active layer, a p-type ZnMgSSe cladding layer, a p-type ZnSe contact layer and a p-type ZnTe contact layer which are stacked in this sequence on an n-type GaAs substrate. A p-side electrode is provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. A multiquantum well layer comprising quantum wells made of p-type ZnTe and barriers made of p-type ZnSe is provided in the depletion layer produced in the p-type ZnSe contact layer along the junction interface between the p-type ZnSe contact layer and the p-type ZnTe contact layer. Holes injected from the p-side electrode pass through the junction by the resonant tunneling effect through quantum levels formed in the quantum wells of the multiquantum well layer.
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Akimoto Katsuhiro
Hiei Futoshi
Ikeda Masao
Iochi Yoshino
Ishibash Akira
Crane Sara W.
Meier Stephen D.
Sony Corporation
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