Semiconductor memory with trench capacitor and method of...

Details Semiconductor memory with trench capacitor and method of... Semiconductor memory with trench capacitor and method of...

2005-08-16

2005-08-16

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257S301000, C257S347000, C438S241000, C438S246000

Reexamination Certificate

active

06930012

ABSTRACT:
A semiconductor memory device includes first and second semiconductor layers, a buried insulating layer, a trench comprising a retreated portion, and the trench defining a first opening width at the second semiconductor layer, a first capacitor electrode formed in the first semiconductor layer, a capacitor insulating film formed in the trench, a second capacitor electrode formed in the trench in the first semiconductor layer, an insulating film formed on a side surface of the retreated portion and defining second and third opening widths, the second opening width serving as a width at the buried insulating layer and being not more than the first opening width, and the third opening width serving as a width at a boundary portion between the buried insulating layer and first semiconductor layer, and a connection portion electrically connected to the second capacitor electrode.

REFERENCES:
patent: 4833094 (1989-05-01), Kenney
patent: 5014887 (1991-05-01), Kopp
patent: 5075248 (1991-12-01), Yoon et al.
patent: 5309008 (1994-05-01), Watanabe
patent: 5363327 (1994-11-01), Henkles et al.
patent: 5571743 (1996-11-01), Henkels et al.
patent: 5618751 (1997-04-01), Golden et al.
patent: 5770484 (1998-06-01), Kleinhenz
patent: 6001684 (1999-12-01), Shen
patent: 6472702 (2002-10-01), Shen

Affiliated with

Also associated with

Rating

Semiconductor memory with trench capacitor and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory with trench capacitor and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory with trench capacitor and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3477368