Semiconductor memory with segmented word lines

Details Semiconductor memory with segmented word lines Semiconductor memory with segmented word lines

1984-06-28

1988-05-24

Hecker, Stuart N.

Static information storage and retrieval

Addressing

365179, G11C 800

Patent

active

047470836

ABSTRACT:
A semiconductor memory device including at least word lines and bit lines with memory cells located at each cross point therebetween. Each of the word lines is divided to form segmented word lines and each of the word line segments is driven by an individual private word driver. The individual private word drivers are activated together in response to a word selection signal. Level shifting diodes are employed in the bit line drivers to offset a voltage level change caused by the segment word drivers.

REFERENCES:
patent: 4262340 (1981-04-01), Sasaki et al.
patent: 4370736 (1983-01-01), Takahashi
patent: 4417326 (1983-11-01), Toyoda et al.
Patent Abstracts of Japan, vol. 6, No. 233 (P-156), Nov. 19, 1982; JP-A-57-133586.

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