Semiconductor memory with local phase generation from global pha

Static information storage and retrieval – Addressing

Patent

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36523004, G11C 800

Patent

active

061046612

ABSTRACT:
A Dynamic Random Access Memory (DRAM) eliminates the need to route section signals to local phase drivers to generate local phase signals by gating local isolation signals and global phase signals together in the local phase drivers to generate the local phase signals. As a result, the die "footprint" of the DRAM is reduced.

REFERENCES:
patent: 5726596 (1998-03-01), Perez
patent: 5774412 (1998-06-01), Raad et al.
patent: 5898636 (1999-04-01), Keeth

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