Semiconductor memory with leak-resistant bit lines

Details Semiconductor memory with leak-resistant bit lines Semiconductor memory with leak-resistant bit lines

1992-09-11

1994-03-01

LaRoche, Eugene R.

Static information storage and retrieval

Interconnection arrangements

365 51, 257767, G11C 506

Patent

active

052914330

ABSTRACT:
Each of the bit lines of a semiconductor memory has an intermediate section with low electrical resistance and low electromigration resistance. If the bit line is shorted to a word line, during burn-in the electrical resistance of the intermediate section increases because of electromigration, thereby preventing excess current from leaking through the shorted bit line during subsequent use.

REFERENCES:
patent: 4931845 (1990-06-01), Ema
patent: 4937652 (1990-06-01), Okumura
patent: 5051812 (1991-09-01), Onuki
Kikuda et al., "Optimized Redundancy Selection Based on Failure-Related Yield Model for 64Mb DRAM and Beyond," Digest of Technical Papers, sec. TAM 6.1, pp. 104-105 (1991 IEEE International Solid-State Circuits Conference).

Affiliated with

Also associated with

Rating

Semiconductor memory with leak-resistant bit lines does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory with leak-resistant bit lines, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory with leak-resistant bit lines will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-583843