Semiconductor memory using trench capacitor

Details Semiconductor memory using trench capacitor Semiconductor memory using trench capacitor

1988-02-10

1989-08-22

Clawson, Jr., Joseph E.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 55, 357 41, 357 56, 365149, 365182, H01L 2978

Patent

active

048600717

ABSTRACT:
A memory is disclosed which uses a microcapacitor as a data storage portion. The microcapacitor uses as its main electrode surface the side wall of a first trench formed on a semiconductor substrate, and is fabricated by diffusing an impurity from a second diffusion trench adjacent to the first trench by setting the shapes and diffusion conditions of the first and second trenches so that the tip of the diffusion layer reaches the side wall of the first trench. The capacitor uses the diffusion layer as one of the electrodes. An insulating film is deposited on the side wall of the first trench and an electrode as the other electrode of the capacitor is deposited on this insulating film. The memory can reduce a leakage current between memory cells by connecting the capacitor to a transistor fabricated in the same semiconductor substrate, and can be formed within a limited space.

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