Semiconductor memory using select transistors coupled to sub-bit

Details Semiconductor memory using select transistors coupled to sub-bit Semiconductor memory using select transistors coupled to sub-bit

1997-05-30

1998-12-22

Nelms, David

Static information storage and retrieval

Read only systems

Semiconductive

365 51, 365 63, G11C 1700

Patent

active

058525700

ABSTRACT:
The semiconductor memory device of the invention includes: a semiconductor substrate; a first block; a second block adjacent to the first block; a main bitline; a first auxiliary conductive region; a first select transistor; and a first select line. The first block includes a first memory transistor having a first electrode, a second electrode and a gate electrode; a first sub-bitline including a part functioning as the first electrode of the first memory transistor; a second sub-bitline including a part functioning as the second electrode of the first memory transistor; and a first word line including a part functioning as the gate electrode of the first memory transistor, while the second block includes: a second memory transistor having a third electrode, a fourth electrode and a gate electrode; a third sub-bitline including a part functioning as the third electrode of the second memory transistor; a fourth sub-bitline including a part functioning as the fourth electrode of the second memory transistor; and a second word line including a part functioning as the gate electrode of the second memory transistor.

REFERENCES:
patent: 5432730 (1995-07-01), Shubat et al.
patent: 5455787 (1995-10-01), Kawasima
patent: 5493527 (1996-02-01), Lo et al.
patent: 5499215 (1996-03-01), Hatta
patent: 5506816 (1996-04-01), Hirose et al.

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