Static information storage and retrieval – Addressing – Plural blocks or banks
Reexamination Certificate
2006-12-26
2006-12-26
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Addressing
Plural blocks or banks
C365S230030
Reexamination Certificate
active
07154807
ABSTRACT:
A redundancy judge circuit (3) includes a redundancy judge circuit address+1 controller (30), an even-numbered redundant address judge section (31), an odd-numbered redundancy judge section (32), a redundant address ROM (33), a redundant IOROM (34), and a select section (35). The redundancy judge circuit (3) may also include a memory cell circuit (2), a read circuit (4), and an address generator circuit (5). With this structure, redundancy remedy can be conducted even during the burst operation due to the 2-bit prefetch, and slowing of the read operation speed can be prevented. Because it is possible to reduce the signal bus length of a decode signal bus in a column direction to substantially half and to reduce a decode signal bus region to substantially half, it is possible to prevent the wiring density in the wiring region of the decode signal bus from becoming high thereby preventing an increase in the read speed.
REFERENCES:
patent: 4330864 (1982-05-01), Ohyabu
patent: 5768560 (1998-06-01), Lieberman et al.
patent: 5881009 (1999-03-01), Tomita
patent: 5905681 (1999-05-01), Matsui
patent: 6064625 (2000-05-01), Tomita
patent: 6335901 (2002-01-01), Morita et al.
patent: 6460110 (2002-10-01), Tomita
patent: 6542422 (2003-04-01), Furutani et al.
patent: 2001/0026478 (2001-10-01), Noda et al.
patent: 2001/0042161 (2001-11-01), Tomita
patent: 2002/0093870 (2002-07-01), Noda et al.
patent: 2002/0194420 (2002-12-01), Tomita
patent: 2004/0004866 (2004-01-01), Hidaka
patent: 06-060691 (1994-03-01), None
patent: 10-340579 (1998-12-01), None
Ingrassia Fisher & Lorenz P.C.
Le Thong Q.
Spansion LLC
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