Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2005-07-19
2005-07-19
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S513000, C257S392000, C438S212000
Reexamination Certificate
active
06919611
ABSTRACT:
Gate structures, comprising a first insulation film, a first gate material and a gate oxide film, are formed. A second insulation film is formed on side surfaces of the gate structures in the peripheral region. Trenches are formed at a surface of the semiconductor substrate by etching the semiconductor substrate with the first and the second insulation films used as masks. The second insulation film formed on side surface of the gate structures is removed, exposing the surface of the semiconductor substrate in the vicinity of the gate structures on both sides of the trenches. Element-isolating insulation films are formed in the trenches and on the exposed substrate. The gate structures in the peripheral region are removed. Gate structures of peripheral transistors are formed between the element-isolating insulation films in the peripheral region.
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Fourson George
Kabushiki Kaisha Toshiba
Pham Thanh V
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