Semiconductor memory of multiple-bank structure having block wri

Details Semiconductor memory of multiple-bank structure having block wri Semiconductor memory of multiple-bank structure having block wri

1997-02-20

1998-09-01

Yoo, Do Hyun

Static information storage and retrieval

Addressing

Plural blocks or banks

365191, 36523006, G11C 700

Patent

active

058020063

ABSTRACT:
A semiconductor memory includes an A-bank and a B-bank and has a block write function. Each bank includes a memory cell array and a block write controller associated thereto responding to a bank selection signal and a block write enable signal, for realizing a block writing to the associated memory cell array. The semiconductor memory includes a bank selection circuit controlled at the time of the block writing by a control signal generated in response to the block write command, for simultaneously activating two block write enable signals which are supplied to respective block write control means of the A-bank and the B-bank, so that the block writing is simultaneously executed in the A-bank and the B-bank.

REFERENCES:
patent: 5596740 (1997-01-01), Quattromani et al.
patent: 5617555 (1997-04-01), Patel et al.

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