Semiconductor memory having trench capacitor formed with sheath

Details Semiconductor memory having trench capacitor formed with sheath Semiconductor memory having trench capacitor formed with sheath

1987-11-20

1990-04-17

James, Andrew J.

357 55, H01L 2978

Patent

active

049185020

ABSTRACT:
The present invention relates to a highly packaged semiconductor memory, and more particularly to a memory cell having a trench capacitor for use in a CMOS memory. The present invention discloses a semiconductor memory employing memory cells each constructed of a trench type charge storage capacitor formed within a substrate, and a switching transistor; one electrode of the capacitor having a sheath-shaped structure which is electrically continuous with the Si substrate at a bottom of a groove and whose sideward periphery is covered with an insulator, the other electrode of the capacitor having a part which is buried inside the sheath electrode and another part which is electrically connected with an impurity diffused layer to function as a source region of the transistor. Further, a structure in which a voltage of 1/2 V.sub.cc can be applied to a plate electrode of a memory cell having a trench capacitor is disclosed.

REFERENCES:
patent: 4728623 (1988-03-01), Lu
patent: 4791610 (1988-12-01), Takemae
patent: 4794434 (1988-12-01), Pelley
patent: 4803535 (1989-02-01), Taguchi
IEDM Technical Digest, Dec. 1986, pp. 136-139, by Taguchi et al.

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